vishay tsop11..ks1 document number 82009 rev. 9, 15-oct-2002 vishay semiconductors www.vishay.com 1 12797 ir receiver modules for remote control systems description the tsop11..ks1 - series are miniaturized receivers for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with short burst transmission codes and high data rates. features ? photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field distur- bance ttl and cmos compatibility output active low low power consumption high immunity against ambient light special features enhanced data rate up to 4000 bit/s operation with short bursts possible ( 6 cycles/ burst) block diagram parts table application circuit 25 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit part carrier frequency tsop1130ks1 30 khz tsop1133ks1 33 khz tsop1136ks1 36 khz tsop1137ks1 36.7 khz tsop1138ks1 38 khz tsop1140ks1 40 khz tsop1156ks1 56 khz c 1 = 4.7 f tsopxxxx out gnd circuit c r 1 =100 ? +v s gnd transmitter with tsalxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o the output voltage should not be hold continuously at a voltage below v o = 3.3 v by the external circuit.
www.vishay.com 2 document number 82009 rev. 9, 15-oct-2002 vishay tsop11..ks1 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and optical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25c unless otherwise specified) parameter test condition symbol value unit supply voltage (pin 2) v s - 0.3 to + 6.0 v supply current (pin 2) i s 5 ma output voltage (pin 3) v o - 0.3 to + 6.0 v output current (pin 3) i o 5 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 5 s t sd 260 c parameter te s t c o n d i t i o n symbol min typ. max unit supply current (pin 2) v s = 5 v, e v = 0 i sd 0.8 1.2 1.5 ma v s = 5 v, e v = 40 klx, sunlight i sh 1.5 ma supply voltage (pin 2) v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.3, ir diode tsal6200, i f = 0.4 a d 35 m output voltage low (pin 3) i osl = 0.5 ma, e e = 0.7 mw/m 2 , f = f o , test signal see fig.1 v osl 250 mv irradiance (30 - 40 khz) test signal see fig.1 e e min 0.4 0.6 mw/m 2 test signal see fig.3 e e min 0.35 0.5 mw/m 2 irradiance (56 khz) test signal see fig.1 e e min 0.45 0.7 mw/m 2 test signal see fig.3 e e min 0.40 0.6 mw/m 2 irradiance test signal see fig.1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg figure 1. output function e e t t pi *) t v o v oh v ol t po 2) t 14337 optical test signal (ir diode tsal6200, i f =0.4 a, n=6 pulses, f=f 0 , t=10 ms) output signal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi ? 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal function figure 2. pulse length and sensitivity in dark ambient t ? output pulse width ( ms ) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16907 po input burst duration = 950 nm, optical test signal, fig.1 output pulse
vishay tsop11..ks1 document number 82009 rev. 9, 15-oct-2002 vishay semiconductors www.vishay.com 3 figure 3. output function figure 4. output pulse diagram figure 5. frequency dependence of responsivity e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 ) t ,t ? output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16910 to ff = 950 nm, optical test signal, fig.3 to n on off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 ? relative frequency 16926 f = f 0 5% f ( 3db ) = f 0 /7 e / e ? rel. responsivity e min e figure 6. sensitivity in bright ambient figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. electric field disturbances 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e ? ambient dc irradiance (w/m 2 ) 16911 correlation with ambient light sources: 10w/m 2 1.4klx (std.illum.a,t=2855k) 10w/m 2 8.2klx (daylight,t=5900k) ambient, = 950 nm e ? threshold irradiance ( mw/m ) e min 2 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms ? ac voltage on dc supply voltage (mv) 16912 f = f o f = 10 khz e ? threshold irradiance ( mw/m ) e min 2 f = 1 khz f = 100 hz e ? threshold irradiance ( mw/m ) 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e ? field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e min 2 f(e) = f 0
www.vishay.com 4 document number 82009 rev. 9, 15-oct-2002 vishay tsop11..ks1 vishay semiconductors suitable data format the circuit of the tsop11..ks1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal should fulf ill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 6 cycles/burst or longer. after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the figure 9. max. envelope duty cycle vs. burstlength figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16914 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ?30?150 153045607590 t amb ? ambient temperature ( q c ) 16918 sensitivity in dark ambient e ? threshold irradiance ( mw/m ) e min 2 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) ? relative spectral sensitivity rel ? wavelength ( nm ) 1150 94 8408 1.0 figure 12. horizontal directivity ? x figure 13. vertical directivity ? y 95 11340p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 d rel C relative transmission distance 95 11339p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 q 30 q 10 q 20 q 40 q 50 q 60 q 70 q 80 q 1.0 0.8 0.7 d rel C relative transmission distance
vishay tsop11..ks1 document number 82009 rev. 9, 15-oct-2002 vishay semiconductors www.vishay.com 5 data stream. this gap time should have at least same length as the burst. up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r-2000 code, recs-80 code. when a disturbance signal is applied to the tsop11..ks1 it can still receive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occure. some examples for such disturbance signals which are suppressed by the tsop11..ks1 are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38 khz or at any other fre- quency signals from fluorescent lamps with electronic bal- last (an example of the signal modulation is in the fig- ure below). figure 14. ir signal from fluorescent lamp with low modulation 0 5 10 15 20 time ( ms ) 16920 ir signal ir signal from fluorescent lamp with low modulation
www.vishay.com 6 document number 82009 rev. 9, 15-oct-2002 vishay tsop11..ks1 vishay semiconductors package dimensions in mm 12824
vishay tsop11..ks1 document number 82009 rev. 9, 15-oct-2002 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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